features m e t al - s e m i c on d u c t or jun c t ion wi t h gua r d r ing e p i t a x i al c o n s t r u c t ion l o w f o r wa r d v ol t age d r op , low s wi t c hing lo ss e s h i gh s u r ge c ap a bili t y mechanical data case:jedec to--220ac,molded plastic terminals: leads solderable per mil- std-750,method 2026 polarity: as m arked w eigh t : 0.064 ounces,1.81 gram mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. s f8 2 s f8 3 s f8 4 s f8 5 s f86 u n i t s maximum recurrent peak reverse voltage v r r m 100 15 0 2 00 3 00 4 00 v ma x imum rms v olt a ge v r m s 70 105 14 0 2 1 0 28 0 v maximum dc blocking voltage v dc 1 00 15 0 2 0 0 3 0 0 4 00 v maximum average forw ard rectified current @ t c = 1 00 peak forw ard surge current 8.3ms single half -sine-w ave s upe r i m po s ed on r a t e d l oad m a x i m u m r e v e r s e c u rr e n t @ t c = 2 5 at rated dc blocking voltage @t c = 1 0 0 t y p i c a l t he r m a l r e s i s t a n c e ( n o t e 2 ) r j c /w o p e r a t i n g j un c t i on t e m p e r a t u r e r a n ge t j s t o r age t e m p e r a t u r e r a n ge t s t g -5 5 ---- + 1 5 0 maximum instantaneous forw ard voltage @ 8 . 0 a v f 10 5 0 0 v 1.0 1.3 5 1 25 5 0 s f8 1 35 50 8 . 0 2 . t her m al re s i st an c e jun c t ion t o ca se . m a i r i fsm n o t e: 1 . measured at 1mhz and applied reverse voltage of 4.0 volts. a 3 .0 - 5 5 ---- + 15 0 s f8 1 --- s f86 a f o r u s e in l o w v o l t ag e , hi g h f r e q ue n c y in v e r t e r s f r e e xxxx wheeling,and polarity protection applications i f(av) ultra fast rectifi ers v o l t a g e r a n g e: 5 0 --- 4 0 0 v current: 8.0a to - 220ac t h e pl a s t ic m a t e r ial c a rr i e s u / l r e c ogn i t ion 9 4 v - o maximum ratings and electrical characteristics zz maximum reverse recovery time (note 3) t rr 35 5 0 ns 3.reverse recovery test conditions:i f =0.5a,i r =1a,i rr =0.25a typical junction capacitance (note 1) c j 50 30 p f www.diode.kr diode semiconductor korea
amperes amperes amperes f i g . 3 - - t y p i cal i n st an t an e o us f o r w ard chara c t e r i s t i cs instantaneous forward current i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s reverse voltage, ( v ) sf81 - - - sf86 case t e m p e r a t ur e , number of cycles at 60hz fig.1 -- forward current derating curve fig.2 -- peak forward surge current average forward rectified current junction capacitance, (pf) p eak forward surge current 100 1 . 0 50 125 75 0 25 5 . 0 10 50 100 t j =t j max 8.3ms single half sine-wave pulse width=300 s 1% duty cycle t j =25 ?? 0.1 1.0 10 50 0. 6 0. 8 0. 9 1.0 1.1 1. 31.2 1. 4 1. 5 s f8 1 - s f8 4 s f8 5 - s f8 6 0 2 4 6 0 50 100 175 single phase half wave 60hz resistive or inductive load 8 12 10 25 75 125 150 fig. 4 - typical junction capacitance 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 sf81~sf84 sf85~sf86 t j = 25 www.diode.kr diode semiconductor korea
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